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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits PINNING (see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ16010 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25ae Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 850 450 6 15 20 10 15 175 1.0 150 -65~200 ae UNIT V V V A A A A W W/ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT ae /W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance CONDITIONS IC=0.1A ;IB=0 IC=5A; IB=0.7A IC=10A ;IB=1.3A TC=100ae IC=10A ;IB=1.3A TC=100ae VCE=850V;RBE=50| ;TC=100ae VCE=850V; VBE(off)=1.5V TC=100ae VEB=6V; IC=0 IC=15A ; VCE=5V VCB=10V,IE=0;f=1.0KHz 5 MIN 450 TYP. MJ16010 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-2 ICER ICEV IEBO hFE COB MAX UNIT V 2.5 3.0 3.0 1.5 1.5 2.5 0.25 1.5 10 V V V mA mA mA 400 pF Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=10A ; VCC=250V IB1=1.3A ;IB2=2.6A PW=30|I s; RB2=1.6| Duty CycleU 2.0% 20 200 1200 200 ns ns ns ns JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE MJ16010 Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) JMnic |
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